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8 March 1995 Confinement-factor measurement in laser diodes by absorption-loss modulation with injected carriers
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Proceedings Volume 2461, ROMOPTO '94: Fourth Conference in Optics; (1995)
Event: ROMOPTO '94: 4th Conference on Optics, 1994, Bucharest, Romania
Designing of laser diodes needs waveguide parameter optimization and testing. In order to maximize the emitted power of a laser diode an important design parameter is the optical confinement factor (Gamma) of the active region and the reduced confinement factor g equals G/d, where d is the active region thickness. This paper presents a measurement method of the reduced confinement factor by correlating changes in absorption loss with the current density of injected free carriers, for a LPE fabricated double heterostructure single quantum well laser diode with the active region thickness of about 0.1 micrometers . A reduced confinement factor of 8.5 10-2 micrometers -1 and waveguide absorption coefficient of 1.8 cm-1 of the laser diode are reported.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. D. Cengher, Aurel M. Vlaicu, Gheorghe Iordache, and Iulian B. Petrescu-Prahova "Confinement-factor measurement in laser diodes by absorption-loss modulation with injected carriers", Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995);

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