8 March 1995 Influence of charge-carrier concentration on photoelectric properties of ITO-nSi structures
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Proceedings Volume 2461, ROMOPTO '94: Fourth Conference in Optics; (1995) https://doi.org/10.1117/12.203460
Event: ROMOPTO '94: 4th Conference on Optics, 1994, Bucharest, Romania
Abstract
The ITO-nSi semiconductor heterojunctions, carried out by the deposition of a thin oxide- semiconductor layer In2O3:SnO2 (ITO) on silicium substrates, have high photoelectric sensibility beginning just with 0.38 micrometers and it is almost uniform in the whole range of the visible spectrum. The aim of the present paper was to establish the optimum charge carrier concentration in Si substrates for obtaining ITO-nSi structures with highest photovoltaic parameters. For ITO-nSi structures prepared on Si substrates with charge carrier concentration n equals (0.9 - 5.5) 1015 cm-3, the maximum values of electrical parameters determined in photovoltaic regime were obtained: the open circuit voltage V equals 0.49 V, the short-circuit current I equals 13 - 14.8 mA/cm2, the fill factor FF equals 0.66 degree(s) and the conversion efficiency (tau) equals 7%.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ludmila S. Gagara, Ludmila S. Gagara, Elena A. Negru, Elena A. Negru, Valentin Pleshka, Valentin Pleshka, C. Radu, C. Radu, Silvia Radu, Silvia Radu, Alexei V. Simaschevici, Alexei V. Simaschevici, D. A. Serban, D. A. Serban, } "Influence of charge-carrier concentration on photoelectric properties of ITO-nSi structures", Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); doi: 10.1117/12.203460; https://doi.org/10.1117/12.203460
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