8 March 1995 Influence of material properties on some parameters of n-type InSb IR photoconductive detector
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Proceedings Volume 2461, ROMOPTO '94: Fourth Conference in Optics; (1995); doi: 10.1117/12.203605
Event: ROMOPTO '94: 4th Conference on Optics, 1994, Bucharest, Romania
Abstract
This paper refers to the influence of the electrical and transport properties of n-type InSb single crystal on the parameters of the IR (3 - 5 micrometers ) photoconductive (PC)-detector. We consider a simple n-type PC element made of InSb single crystal. Some general physical features of the device, the device performance related to the material properties and the characterization techniques involved are described.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cristiana E. A. Grigorescu, Stefan A. Manea, E. Elena, T. Botila, Mihail F. Lazarescu, "Influence of material properties on some parameters of n-type InSb IR photoconductive detector", Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); doi: 10.1117/12.203605; https://doi.org/10.1117/12.203605
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KEYWORDS
Sensors

Crystals

Infrared sensors

Infrared detectors

Hydrogen

Indium

Physics

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