8 March 1995 Laser reflective interferometry for in situ monitoring of thin films
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Proceedings Volume 2461, ROMOPTO '94: Fourth Conference in Optics; (1995) https://doi.org/10.1117/12.203496
Event: ROMOPTO '94: 4th Conference on Optics, 1994, Bucharest, Romania
Abstract
The optimal conditions for the deposition of thin solid films are fitted with many experiments for it is implied an exhaustive work. In this paper, a method to match the optimal conditions during the film deposition is presented. The method provides the possibility to find some important parameters that characterize the film, such as reflection coefficient, absorption factor and, with some restriction, the stoichiometry of the compounds films. A simple laser reflective interferometer has been employed for `in situ' monitoring of ZnO and (alpha) Si-H films, growth through a d.c. planar magnetron sputtering system. The interference oscillation period provides an accurate and immediate measure of the growth rate. In addition, the variation of the extrema of the oscillations provides an estimate of the quality of the film.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ioan Vascan, Ioan Vascan, Marius D. Stamate, Marius D. Stamate, Iuliana-Mihaela J. Lazar, Iuliana-Mihaela J. Lazar, Gabriel-Octavian Lazar, Gabriel-Octavian Lazar, Ioan I. Rusu, Ioan I. Rusu, } "Laser reflective interferometry for in situ monitoring of thin films", Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); doi: 10.1117/12.203496; https://doi.org/10.1117/12.203496
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