8 March 1995 Light-controlled switching in p+nSi-ITO structures
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Proceedings Volume 2461, ROMOPTO '94: Fourth Conference in Optics; (1995) https://doi.org/10.1117/12.203595
Event: ROMOPTO '94: 4th Conference on Optics, 1994, Bucharest, Romania
Abstract
I-V characteristics for a structure consisting of a silicon p+-n junction and a semiconductor-insulator-semiconductor structure obtained by spray deposition of In2O3:SnO2 (ITO) thin layer of on the surface of nSi have been obtained and investigated. In the case of direct biased p+nSi junction and reverse biased nSi-ITO structure a switching from high-resistance into low-resistance state occurs. The switching may be removed by voltage decreasing or illumination with white light. I-V characteristics for each junction have been investigated and a band diagram for the p+-nSi-ITO structure have been proposed. This diagram allows to explain the observed current switching as a result of the double injection in nSi region. These results show that the p+nSi-ITO structure possesses an S-type I-V characteristic, which may be controlled by voltage and by light. Unlike others S-type diodes in this case the illumination switches the structure from high-resistance into low-resistance state.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ludmila S. Gagara, Ludmila S. Gagara, Elena A. Negru, Elena A. Negru, Valentin Pleshka, Valentin Pleshka, Dormidont Sherban, Dormidont Sherban, Alexei V. Simaschevici, Alexei V. Simaschevici, } "Light-controlled switching in p+nSi-ITO structures", Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); doi: 10.1117/12.203595; https://doi.org/10.1117/12.203595
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