8 March 1995 Optical absorption and photovoltaic effect in α-In2Te3
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Proceedings Volume 2461, ROMOPTO '94: Fourth Conference in Optics; (1995) https://doi.org/10.1117/12.203488
Event: ROMOPTO '94: 4th Conference on Optics, 1994, Bucharest, Romania
The fundamental band gap of (alpha) -In2Te3 as a function of temperature has been deduced from transmission measurements. The absorption edge is due to indirect allowed transitions. Photovoltaic effect has been extensively investigated in gold-indium telluride Schottky barriers, realized through vacuum evaporation. A barrier of 0,67 eV height, has been found by means of the spectral dependence of the photoemission current.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Camelia Mushinschi, Camelia Mushinschi, C. Ghizdeanu, C. Ghizdeanu, Gabriel-Octavian Lazar, Gabriel-Octavian Lazar, Iuliana-Mihaela J. Lazar, Iuliana-Mihaela J. Lazar, } "Optical absorption and photovoltaic effect in α-In2Te3", Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); doi: 10.1117/12.203488; https://doi.org/10.1117/12.203488

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