8 March 1995 Optical properties of hydrogenated silicon prepared by dc magnetron sputtering
Author Affiliations +
Proceedings Volume 2461, ROMOPTO '94: Fourth Conference in Optics; (1995); doi: 10.1117/12.203497
Event: ROMOPTO '94: 4th Conference on Optics, 1994, Bucharest, Romania
Abstract
The optical transmission of (alpha) -Si:H has been studied between 700 - 24.000 cm-1. The induced penetration of the residual gas is emphasized by a strong absorption band about 1070 cm-1.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ioan Vascan, Iuliana-Mihaela J. Lazar, Marius D. Stamate, Gabriel-Octavian Lazar, Ioan I. Rusu, "Optical properties of hydrogenated silicon prepared by dc magnetron sputtering", Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); doi: 10.1117/12.203497; https://doi.org/10.1117/12.203497
PROCEEDINGS
3 PAGES


SHARE
KEYWORDS
Thin films

Silicon

Sputter deposition

Absorption

Optical properties

Transmittance

Magnetism

Back to Top