28 March 1995 Thermal instability observation in power transistors by radiometric detection of temperature maps
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Abstract
In this paper the thermal instability problems in semiconductor power devices are briefly presented. Experimental observations about these phenomena can be achieved by using infrared radiometry to obtain a temperature mapping of the surface of the devices. Our system, based on a radiometric microscope with an automatic scanning and elaboration system, is described. Finally, some results of our system, consisting in dynamic temperature maps obtained on two different devices, are presented, and the causes of their different thermal instability are briefly discussed.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergio Pica, Sergio Pica, G. Scarpetta, G. Scarpetta, } "Thermal instability observation in power transistors by radiometric detection of temperature maps", Proc. SPIE 2473, Thermosense XVII: An International Conference on Thermal Sensing and Imaging Diagnostic Applications, (28 March 1995); doi: 10.1117/12.204844; https://doi.org/10.1117/12.204844
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