30 May 1995 CMOS analog-to-digital conversion for uncooled bolometer infrared detector arrays
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Bias and signal conditioning techniques for uncooled resistance bolometer infrared detectors employ dc bias or various ac modulation and readout techniques. This paper describes a novel method of converting the absorbed incident radiation into digital signals by use of 0.8 micrometers CMOS oscillators in each pixel. Incoming radiation causes a resistance change in the bolometer which in turn results in a frequency shift. A concept of accurately readout out the digital signals from each pixel in the array is presented. Pixelwise A/D conversion and readout is demonstrated using a thin film semiconductor bolometer detector array. An NETD (Noise Equivalent Temperature Difference) of 0.1 K has been measured.
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Ulf Ringh, Ulf Ringh, Christer Jansson, Christer Jansson, Kevin Charles Liddiard, Kevin Charles Liddiard, } "CMOS analog-to-digital conversion for uncooled bolometer infrared detector arrays", Proc. SPIE 2474, Smart Focal Plane Arrays and Focal Plane Array Testing, (30 May 1995); doi: 10.1117/12.210544; https://doi.org/10.1117/12.210544

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