An on focal plane analog to digital conversion approach has been implemented for infrared sensor application. This development uses a patented oversampling methodology named MOSAD (Multiplexed OverSample Analog to Digital) in the design of simple circuits that can be placed at individual pixel sites. The construction of an analog to digital converter pixel is allowed with this technology. Most of the crosstalk and broadband noise associated with analog multiplexing and readout is avoided. Two demonstration designs were developed and built with Orbit, 1.2 micron CMOS Foresight process. For cost reasons, both designs were placed on the small die, 4.8 X 4.8 mm, and packaged in a 84 pin grid array carrier. These designs consist of a scanning array, 1 X 64 on 60 micron centers and two column portion of a 64 X 64 staring array on 60 micron centers. The detector buffer design will support HgCdTe high background applications. Support for the demonstration was received from Army, Night Vision Laboratory under their two color detector SBIR development program.