30 May 1995 Low-level gamma dosimetry using low-leakage diodes
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Abstract
Low-leakage silicon p-i-n diodes have been investigated for gamma rate dosimetry. Radiation- induced current response was measured versus gamma flux rate in the range of 107 to 109 gamma-photons/cm2(DOT)s. Energy deposition dose rates inferred from radiation-induced current agree well with expected results based on gamma energy-absorption coefficients. Degradation of diode leakage current due to total dose was also tested.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Larry D. Flesner, Larry D. Flesner, Robert K. Creber, Robert K. Creber, Ronald Keith Bentley, Ronald Keith Bentley, } "Low-level gamma dosimetry using low-leakage diodes", Proc. SPIE 2474, Smart Focal Plane Arrays and Focal Plane Array Testing, (30 May 1995); doi: 10.1117/12.210566; https://doi.org/10.1117/12.210566
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