30 May 1995 Low-level gamma dosimetry using low-leakage diodes
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Abstract
Low-leakage silicon p-i-n diodes have been investigated for gamma rate dosimetry. Radiation- induced current response was measured versus gamma flux rate in the range of 107 to 109 gamma-photons/cm2(DOT)s. Energy deposition dose rates inferred from radiation-induced current agree well with expected results based on gamma energy-absorption coefficients. Degradation of diode leakage current due to total dose was also tested.
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Larry D. Flesner, Robert K. Creber, Ronald Keith Bentley, "Low-level gamma dosimetry using low-leakage diodes", Proc. SPIE 2474, Smart Focal Plane Arrays and Focal Plane Array Testing, (30 May 1995); doi: 10.1117/12.210566; https://doi.org/10.1117/12.210566
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