6 June 1995 Development of gallium-doped silicon 128 x 192 element arrays for 8-14 μm observation
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Abstract
New gallium-doped silicon 128 X 192 element arrays have been achieved at CEA-LETI- LIR (Infrared Laboratory) for imaging in the 8 - 14 micrometers spectral range. This program is in keeping with the previous detector developments for the ISOCAM camera (32 X 32 element arrays) and for ground-based observations (64 X 64 element arrays). The main features of the new detectors are: a pitch of 75 micrometers which leads to 10 X 15 mm2 chip dimensions, two selectable storage capacities (respectively 0.1 and 0.5 pF), a DVR readout circuit achieved in an NMOS silicon line with 1.5 micrometers design rules. The main electro-optical performances are the following: a peak responsivity of 4.0 A/W, a noise of 58 fArms over the 0.1 - 128 Hz spectral band which is very close to the BLIP noise, and a corresponding noise equivalent power of 1.4 10-14 W.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christian Lucas, Isabelle Bischoff, Gilles Chammings, Michel Ravetto, Frederic Rothan, Michel Vilain, Philippe Galdemard, Rene Jouan, Pierre-Olivier Lagage, Pierre Masse, "Development of gallium-doped silicon 128 x 192 element arrays for 8-14 μm observation", Proc. SPIE 2475, Infrared Detectors and Instrumentation for Astronomy, (6 June 1995); doi: 10.1117/12.211292; https://doi.org/10.1117/12.211292
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KEYWORDS
Silicon

Sensors

Cameras

Astronomical imaging

Demultiplexers

Digital video recorders

Electro optics

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