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6 June 1995 Novel homojunction interfacial workfunction internal photoemission (HIWIP) tunable far-infrared detectors for astronomy
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Abstract
A novel homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (FIR) detector based on the interfacial workfunction (IWF) between a heavily doped absorber/emitter layer and a lightly doped (or intrinsic) layer is reported. The detector structures are classified according to their emitter layer doping concentrations (Nd). The threshold wavelength ((lambda) t) is tunable in the IR wavelength range by changing Nd and bias voltage. This detector concept has been successfully demonstrated using forward biased commercial Si and Ge p-i-n diodes at 4.2 K. Threshold wavelengths ((lambda) t) from around 40 - 220 micrometers for Si and up to 240 micrometers for Ge were experimentally obtained. A theoretical investigation including an estimation of workfunction dependence on Nd, quantum efficiency calculations, and dark current analysis is reported. Based on these results, the detector noise equivalent power (NEP) limited by thermal noise and background noise is calculated.
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A. G. Unil Perera, Henry X. Yuan, Jeong-Woo Choe, and M. H. Francombe "Novel homojunction interfacial workfunction internal photoemission (HIWIP) tunable far-infrared detectors for astronomy", Proc. SPIE 2475, Infrared Detectors and Instrumentation for Astronomy, (6 June 1995); https://doi.org/10.1117/12.211244
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