Applications of complementary surface analysis techniques (AES, SIMS, XPS) to solar cell device problems are discussed. Several examples of device interface and grain boundary problems are presented. Silicon, gallium arsenide and indium phosphide based devices are reviewed. Results of compositional and chemical analysis are correlated directly with EBIC measurements performed in-situ on identical sample areas. Those are, in turn, correlated with resulting photovoltaic device performance. The importance of microanalysis to the solution of critical device problems in the photovoltaics technology is emphasized.