25 November 1980 Thin-Film CdS/CuInSe2 Heterojunction Solar Cell
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Abstract
The development of a polycrystalline, thin-film solar cell utilizing a heterojunction structure based upon N-type CdS and P-type CuInSe2 semiconductor materials is described. The cell, prepared entirely by vacuum deposition and sputtering techniques onto inexpensive substrates, has potential applications as a low-cost mass produced device for photovoltaic power generation systems. A device efficiency of 7.5% under simulated AM-1 illumination is reported. Material and device properties pertinent to the development of the high efficiency cell are reviewed. The electrical, optical, and structural properties of the deposited thin-film materials are described. Results of detailed cell characterization using a variety of electrical, optical, and thermal measurements are presented and analyzed in terms of a photovoltaic cell model dominated by interface state recombinations. Finally, the projected, realistically achievable performance of this thin-film cell is discussed.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wen S. Chen, Wen S. Chen, Reid A. Mickelsen, Reid A. Mickelsen, } "Thin-Film CdS/CuInSe2 Heterojunction Solar Cell", Proc. SPIE 0248, Role of Electro-Optics in Photovoltaic Energy Conversion, (25 November 1980); doi: 10.1117/12.970586; https://doi.org/10.1117/12.970586
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