30 June 1995 Chemical and electrical analysis of CdS interlayers on InP and related materials
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Abstract
Cadmium sulfide (CdS) layers were deposited from aqueous solutions of thiourea, cadmium sulfate, and ammonia on (100) InP, InGaAs, and InAlAs. X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and atomic force microscopy (AFM) were used to investigate the structural and chemical nature of the deposited CdS layer and the CdS/semiconductor interface. XPS showed that the deposition process effectively removes existing native oxides on InP and InAlAs before CdS growth occurs. Capacitance-voltage measurements of metal-insulator- semiconductor (MIS) capacitors were used to investigate the interface- state density of samples with and without CdS films between InP and a deposited insulator. CdS interlayers were found to reduce both the hysteresis and the interface-state density of the MIS capacitors. Applications of CdS interlayers for various photonic devices will be discussed.
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Helen M. Dauplaise, Kenneth Vaccaro, Andrew Davis, George O. Ramseyer, Stephen M. Spaziani, Joseph V. Beasock, Eric A. Martin, Joseph P. Lorenzo, "Chemical and electrical analysis of CdS interlayers on InP and related materials", Proc. SPIE 2481, Photonic Device Engineering for Dual-Use Applications, (30 June 1995); doi: 10.1117/12.212724; https://doi.org/10.1117/12.212724
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KEYWORDS
Cadmium sulfide

Interfaces

Oxides

Capacitors

Chemical analysis

Sulfur

Cadmium

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