30 June 1995 Chemical and electrical analysis of CdS interlayers on InP and related materials
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Cadmium sulfide (CdS) layers were deposited from aqueous solutions of thiourea, cadmium sulfate, and ammonia on (100) InP, InGaAs, and InAlAs. X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and atomic force microscopy (AFM) were used to investigate the structural and chemical nature of the deposited CdS layer and the CdS/semiconductor interface. XPS showed that the deposition process effectively removes existing native oxides on InP and InAlAs before CdS growth occurs. Capacitance-voltage measurements of metal-insulator- semiconductor (MIS) capacitors were used to investigate the interface- state density of samples with and without CdS films between InP and a deposited insulator. CdS interlayers were found to reduce both the hysteresis and the interface-state density of the MIS capacitors. Applications of CdS interlayers for various photonic devices will be discussed.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Helen M. Dauplaise, Helen M. Dauplaise, Kenneth Vaccaro, Kenneth Vaccaro, Andrew Davis, Andrew Davis, George O. Ramseyer, George O. Ramseyer, Stephen M. Spaziani, Stephen M. Spaziani, Joseph V. Beasock, Joseph V. Beasock, Eric A. Martin, Eric A. Martin, Joseph P. Lorenzo, Joseph P. Lorenzo, } "Chemical and electrical analysis of CdS interlayers on InP and related materials", Proc. SPIE 2481, Photonic Device Engineering for Dual-Use Applications, (30 June 1995); doi: 10.1117/12.212724; https://doi.org/10.1117/12.212724

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