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30 June 1995 Electroabsorption and carrier dynamics in (Ga,In)As/(Al,In)As asymmetric double quantum wells
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We report enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As Asymmetric Double Quantum Wells (ADQWs) by the use of real space electron transfer. The electron concentration in both the wide and narrow wells is investigated by field dependent absorption and photoluminescence spectroscopy. Additionally, a study of carrier dynamics in these ADQW structures indicates that electrons tunnel between the coupled wells on picosecond time-scales.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark F. Krol, Michael J. Hayduk, Richard P. Leavitt, John T. Pham, Sergey Yu. Ten, Brian P. McGinnis, Galina Khitrova, and Nasser Peyghambarian "Electroabsorption and carrier dynamics in (Ga,In)As/(Al,In)As asymmetric double quantum wells", Proc. SPIE 2481, Photonic Device Engineering for Dual-Use Applications, (30 June 1995);

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