Paper
30 June 1995 Optical electroabsorption modulators for wideband, linear, low-insertion-loss photonic links
Lawrence J. Lembo, Fernando D. Alvarez, Dennis Lo, Chan A. Tu, Philip H. Wisseman, Charles Zmudzinski, John C. Brock
Author Affiliations +
Abstract
We describe the characterization and development of semiconductor quantum well electroabsorption modulators (EAMs) for insertion into high-performance photonic links intended for analog applications. Limitations of existing approaches are described, motivating the potential of EAMs for exploiting the flexibility of semiconductor bandgap engineering. Relationships are established between basic modulator device characteristics and the RF system performance measures of link gain (insertion loss), bandwidth, noise figure, and dynamic range; results are then presented that have established the viability of EAMs for wideband, low-loss, linear analog photonic links.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lawrence J. Lembo, Fernando D. Alvarez, Dennis Lo, Chan A. Tu, Philip H. Wisseman, Charles Zmudzinski, and John C. Brock "Optical electroabsorption modulators for wideband, linear, low-insertion-loss photonic links", Proc. SPIE 2481, Photonic Device Engineering for Dual-Use Applications, (30 June 1995); https://doi.org/10.1117/12.212725
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Cited by 8 scholarly publications.
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KEYWORDS
Modulators

Distortion

Quantum wells

Absorption

Photodetectors

Semiconductors

Switching

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