1 March 1995 Excited state absorption (ESA) spectroscopy measurement of charge transfer bands in doped ionic crystals
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Proceedings Volume 2498, Laser Methods of Surface Treatment and Modification: ALT '94 International Conference; (1995) https://doi.org/10.1117/12.203630
Event: Laser Methods of Surface Treatment and Modification: ALT '94 International Conference, 1994, Konstanz, Germany
Abstract
Possibilities of the excited state absorption (ESA) spectroscopy as the method of investigation of charge transfer (ChT) process in doped ionic crystals are discussed. Temperature dependence of ChT bands of the Cr3+ ions doped crystals suggests that ChT process is mainly donor nature, e.g. [(3d yields 4s or 3d yields (ligand orbital)]. ChT bands positions of Ti3+:Al2O3 and Cr3+:Li2Ge7O15 crystals measured by ESA spectroscopy and two-step photoionization method are approximately the same for each crystal. Wide-band gain of Cr3+:LGO crystal is overlapped by strong ESA band preventing laser effect in the whole luminescence range.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. K. Sevastyanov, B. K. Sevastyanov, } "Excited state absorption (ESA) spectroscopy measurement of charge transfer bands in doped ionic crystals", Proc. SPIE 2498, Laser Methods of Surface Treatment and Modification: ALT '94 International Conference, (1 March 1995); doi: 10.1117/12.203630; https://doi.org/10.1117/12.203630
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