31 March 1995 Interferometric phase shift technique for high-resolution deep-UV microlithography
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Proceedings Volume 2502, Gas Flow and Chemical Lasers: Tenth International Symposium; (1995) https://doi.org/10.1117/12.204981
Event: Gas Flow and Chemical Lasers: Tenth International Symposium, 1994, Friedrichshafen, Germany
Abstract
A new phase shifting technique based on interferometry has been developed which is especially suited for deep-UV microlithography. Using only a single layer chromium mask, with no additional phase shift elements, significant resolution and contrast enhancement over conventional transmission lithography can be achieved. Both computer simulations, as well as experiments using a CCD camera and UV photoresist confirm the capabilities of this new approach. Using a relatively simple experimental setup and an illumination wavelength of 355 nm, lines with feature sizes as fine as 0.3 micrometers were achieved.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank K. Tittel, Joseph R. Cavallaro, Motoi Kido, Michael C. Smayling, Gabor Szabo, William L. Wilson, "Interferometric phase shift technique for high-resolution deep-UV microlithography", Proc. SPIE 2502, Gas Flow and Chemical Lasers: Tenth International Symposium, (31 March 1995); doi: 10.1117/12.204981; https://doi.org/10.1117/12.204981
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