31 March 1995 Selective material ablation by the TEA CO2 laser
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Proceedings Volume 2502, Gas Flow and Chemical Lasers: Tenth International Symposium; (1995) https://doi.org/10.1117/12.204977
Event: Gas Flow and Chemical Lasers: Tenth International Symposium, 1994, Friedrichshafen, Germany
Abstract
This paper reports two topics in the material processing using TEA CO2 lasers. We demonstrated selective ablation of hydrogenated amorphous silicon (a-Si:H) thin layer on a quartz substrate by the second harmonic (SH) radiation of TEA CO2 laser generated by AgGaSe2 nonlinear crystal. Si-H bonds contained in a-Si:H strongly absorb the 5 micrometers SH radiation and resulted in the selective ablation of the a-Si:H layer. The successful ablation processing of ethylenetetrafluoroethylene (ETFE) copolymer by the 9.6 micrometers fundamental wavelength TEA CO2 laser is also reported. Only ETFE thin film adhered to an aluminum substrate can be ablated by the TEA CO2 laser.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tetsumi Sumiyoshi, Tetsumi Sumiyoshi, Akira Shiratori, Akira Shiratori, Yutaka Ninomiya, Yutaka Ninomiya, Minoru Obara, Minoru Obara, } "Selective material ablation by the TEA CO2 laser", Proc. SPIE 2502, Gas Flow and Chemical Lasers: Tenth International Symposium, (31 March 1995); doi: 10.1117/12.204977; https://doi.org/10.1117/12.204977
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