31 March 1995 Si supply mechanism and simulation of composition profiles in excimer laser implant-deposition of stainless steel
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Proceedings Volume 2502, Gas Flow and Chemical Lasers: Tenth International Symposium; (1995) https://doi.org/10.1117/12.204979
Event: Gas Flow and Chemical Lasers: Tenth International Symposium, 1994, Friedrichshafen, Germany
Abstract
Simultaneous doping and deposition of Si onto stainless steel 304 by irradiation of KrF excimer laser beams in an ambient SiH4 gas is demonstrated. The specific process is referred to as laser implant-deposition (LID). Dependence of the total quantities of supplied Si atoms (dose) on the experimental conditions is examined to analyze the LID mechanism. The Si depth profiles in the LID samples are simulated by a liquid phase diffusion model, which show good agreement with the experimental results.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masayuki Jyumonji, Masayuki Jyumonji, Koji Sugioka, Koji Sugioka, Hiroshi Takai, Hiroshi Takai, Hideo Tashiro, Hideo Tashiro, Koichi Toyoda, Koichi Toyoda, } "Si supply mechanism and simulation of composition profiles in excimer laser implant-deposition of stainless steel", Proc. SPIE 2502, Gas Flow and Chemical Lasers: Tenth International Symposium, (31 March 1995); doi: 10.1117/12.204979; https://doi.org/10.1117/12.204979
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