Quasi-distributed temperature sensor based on the 1.2-um transition in erbium-doped fibers

Eric Maurice; Gerard Monnom; Daniel B. Ostrowsky; Greg W. Baxter

doi:10.1117/12.219613

15 September 1995 Quasi-distributed temperature sensor based on the 1.2-μm transition in erbium-doped fibers

Eric Maurice, Gerard Monnom, Daniel B. Ostrowsky, Greg W. Baxter

Proceedings Volume 2507, Distributed and Multiplexed Fiber Optic Sensors V; (1995) https://doi.org/10.1117/12.219613
Event: European Symposium on Optics for Environmental and Public Safety, 1995, Munich, Germany

Abstract

We propose the principle of a high-dynamic, quasi-distributed temperature sensor. We previously have demonstrated the possibility of realizing a high-dynamic point sensor based on the behavior of the green emission in erbium doped silica fibers. We present here the study of the 1.13 micrometers and 1.24 micrometers emission lines, coming from the same levels. Those lines present the same temperature dynamic as the green ones. As the lower level of these transitions is the ⁴I_11/2 level and not the fundamental one, the signal is absorption free. The signal wavelength also corresponds to a transparence region of the intermediate fibers. These arguments permit developing an efficient quasi-distributed configuration. In addition, the intensity ratio of the emission lines is only temperature dependant, so the measurement is self-calibrated. We also demonstrate that the emitting levels can be excited around 800 nm, by the excited state absorption process, which allow using a standard laser diode as pumping source.

Citation Download Citation

Eric Maurice, Gerard Monnom, Daniel B. Ostrowsky, and Greg W. Baxter "Quasi-distributed temperature sensor based on the 1.2-μm transition in erbium-doped fibers", Proc. SPIE 2507, Distributed and Multiplexed Fiber Optic Sensors V, (15 September 1995); https://doi.org/10.1117/12.219613

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KEYWORDS

Absorption

Silica

Erbium

Temperature metrology

Temperature sensors

Luminescence

Sensors

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