3 July 1995 Delay-time-stable chemically amplified e-beam negative-tone resist for optical mask application
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Abstract
The newly developed e-beam negative tone AZ EX resist series has been designed for optical mask applications to produce 64MB DRAMs and related microdevices. The chemistry of AZ EX resists is based on chemical amplification employing the three major components: novolak, crosslinker, and radiation sensitive acid generator. The formulations have been optimized to diminish handicaps of most standard chemically amplified resists, such as delay time instability and line width variations upon post exposure bake temperature changes. The sensitivity of AZ EX series are smaller than 1.0 (mu) C/cm2 at Vacc equals 10 kV featuring a delay time stability of more than 24 hours with < 5% line width error at 1.25 micrometers pattern design. Using standard process conditions, the line width variations versus post exposure bake temperature changes are about 0.09 micrometers / degree(s)C in EX22-N, and 0.07 micrometers / degree(s)C in EX24-N, respectively.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seiya Masuda, Seiya Masuda, Georg Pawlowski, Georg Pawlowski, } "Delay-time-stable chemically amplified e-beam negative-tone resist for optical mask application", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); doi: 10.1117/12.212768; https://doi.org/10.1117/12.212768
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