High-precision EB technology with thin EB resist and distortion-free mask holder for x-ray mask fabrication

Shuichi Noda; Hiroshi Hoga

doi:10.1117/12.212771

Translator Disclaimer

3 July 1995 High-precision EB technology with thin EB resist and distortion-free mask holder for x-ray mask fabrication

Shuichi Noda; Hiroshi Hoga

Author Affiliations +

Proceedings Volume 2512, Photomask and X-Ray Mask Technology II; (1995) https://doi.org/10.1117/12.212771
Event: Photomask Japan 1995, 1995, Kanagawa, Japan

Abstract

EB lithography and dry etching technology have been investigated to improve EB pattern resolution and pattern placement accuracy. High selective reactive ion etching of W absorber and thin EB resist process have been developed adopting intermediate Ti mask layer between the EB resist and W. The EB resist pattern resolution on the W absorber covered by thin Ti mask layer was improved by thinning EB resist and it became possible to obtain 0.12 micrometers -pitch line/space pattern with 0.1 micrometers - thick EB resist. Pattern size decrement for the designed pattern size was also effective to improve the resist pattern resolution. The W absorber was etched with very high selectivity above 500 to the Ti mask layer using Cl₂ + O₂ gas system. Using this RIE technique, it became possible to etch 0.7 micrometers -thick W absorber with 0.05 micrometers -thick EB resist and 0.03 micrometers -thick Ti mask layer. Further, a distortion-free X-ray mask holder for EB writing system has been developed, which is estimated to reduce pattern displacement caused by mask clamping to less than 3 nm within a radius of 10 mm exposure field as far as the clamping distortion was concerned.

Citation Download Citation

Shuichi Noda and Hiroshi Hoga "High-precision EB technology with thin EB resist and distortion-free mask holder for x-ray mask fabrication", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212771

ACCESS THE FULL ARTICLE