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3 July 1995 High-precision EB technology with thin EB resist and distortion-free mask holder for x-ray mask fabrication
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EB lithography and dry etching technology have been investigated to improve EB pattern resolution and pattern placement accuracy. High selective reactive ion etching of W absorber and thin EB resist process have been developed adopting intermediate Ti mask layer between the EB resist and W. The EB resist pattern resolution on the W absorber covered by thin Ti mask layer was improved by thinning EB resist and it became possible to obtain 0.12 micrometers -pitch line/space pattern with 0.1 micrometers - thick EB resist. Pattern size decrement for the designed pattern size was also effective to improve the resist pattern resolution. The W absorber was etched with very high selectivity above 500 to the Ti mask layer using Cl2 + O2 gas system. Using this RIE technique, it became possible to etch 0.7 micrometers -thick W absorber with 0.05 micrometers -thick EB resist and 0.03 micrometers -thick Ti mask layer. Further, a distortion-free X-ray mask holder for EB writing system has been developed, which is estimated to reduce pattern displacement caused by mask clamping to less than 3 nm within a radius of 10 mm exposure field as far as the clamping distortion was concerned.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shuichi Noda and Hiroshi Hoga "High-precision EB technology with thin EB resist and distortion-free mask holder for x-ray mask fabrication", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995);


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