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3 July 1995 Integrated reviewing system for defect inspection
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Abstract
With the coming years design rule will advance down to the subhalf micron region. Due to the resolution limit of the stepper lens, the subhalf micron lithographic technology requires very tight defect levels on reticles. It was found that the printability is closely related to the pattern density. The denser the pattern is, the higher the printability will be. Our experiences tell us that for subhalf micron design rule defect free below 0.3 micrometers on 5X reticle is required for critical layers when the k1 value of the resolution limit R (equals k1 X (lambda) /NA) is below 0.7 and the defect sensitivity becomes the dominated factor for quality assurance. In order to properly specify the defect levels on the reticle, a methodology for quicker defect tracing is necessary. We develop a defect reviewing system which can transform the heterogeneous coordinates of defects found by the different inspection systems at different mask-making stage to a standard Cartesian coordinates. All the inspected data and the transformed coordinates will be managed as a 'DEFECT BANK' which will provide sufficient information during defect-tracing. We expect that this system can play an important role for the wafer process development and yield improvement.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ming-Huei Lin and Shen Chung Kuo "Integrated reviewing system for defect inspection", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212812
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