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3 July 1995 Investigation and improvement of patterning characteristics for annular illumination optical lithography at the periodical pattern ends
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Abstract
This article describes particular patterning characteristics of annular illumination lithography and a method to improve them. Annular illumination lithography is one of the most practical methods to enhance resolution and enlarge focus latitude. However, improving the patterning characteristics is not sufficient at the ends of periodical patterns in spite of superior performance at the periodical parts. Here, the degradation of the patten profiles at the periodical ends are investigated in detail, and size-modification of the end patterns is proposed. By making the reticle pattern widths a little wider only at the ends, end-pattern degradation is greatly improved, and practical depth-of-focus is favorably extended.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshiyuki Horiuchi, Katsuhiro Harada, Yoshinobu Takeuchi, Yoshiaki Mimura, and Emi Tamechika "Investigation and improvement of patterning characteristics for annular illumination optical lithography at the periodical pattern ends", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212793
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