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3 July 1995 One-point wafer bonding for highly accurate x-ray masks
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Abstract
We have proposed a new method of bonding Si wafers to glass frames for highly accurate X-ray masks. The method, called one-point bonding, is characterized by bonding the wafer at a very small area on the outer region of the wafer and floating the wafer over the frame except at the bonding area. This construction frees the wafer from any external force that acts on the frame. We found that this bonding method does not cause deformation of the wafer or pattern placement shifts in the membrane. The bonding of a 4-mm-diameter glued area is strong enough to withstand a vertical load of 150 g, therefore, wafers bonded to the frame by this method are not peeled off during mask handling. We have confirmed that no deformations occur in wafers bonded by this method even if the frame is deformed in a stepper.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masatoshi Oda, Takashi Ohkubo, and Hideo Yoshihara "One-point wafer bonding for highly accurate x-ray masks", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212772
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