Translator Disclaimer
3 July 1995 Recent advances in mask-making technology at AT&T
Author Affiliations +
Abstract
As the design rules to make integrated circuits with features less than 0.25 micrometers are emerging, it appears that conventional deep UV photolithography will not be able to support these new generation IC technologies. There are however other possibilities such as enhanced optics, proximity x-ray and projection electron-beam which extend the state of lithography below 0.25 micrometers . AT&T is in a unique position to evaluate these new technologies since we have active programs in each of these areas. It is clear that the success of any of these new techniques is directly connected to the ability to manufacture the corresponding mask.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Regine G. Tarascon "Recent advances in mask-making technology at AT&T", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212799
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Mask cost and cycle time reduction
Proceedings of SPIE (August 27 2003)
Current status of NGL masks
Proceedings of SPIE (July 18 2000)
Single-write self-aligned rim-phase-shift process
Proceedings of SPIE (June 25 2003)
Sub 0.18 um line space lithography using 248 nm scanners...
Proceedings of SPIE (December 29 1999)
Lithography strategy for 65-nm node
Proceedings of SPIE (July 31 2002)

Back to Top