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3 July 1995 Reflection masks for soft x-ray projection lithography
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Abstract
A multilayer reflection mask is fabricated for soft x-ray projection lithography at a wavelength of 13 nm. A Mo/Si multilayer is deposited using magnetron sputtering to obtain high reflectivity at near normal incidence. Reactive ion etching in SF6 is applied to form a fine W absorber pattern with a thin SiO2 etch-stop layer. Observation of the resulting pattern profile with a scanning electron microscope shows a smooth reflective surface. Reflectivity measurement using a large- reflective-area sample indicates that the patterning process causes little damage to the multilayer. Projection imaging using a 20:1 Schwarzschild optic confirms that a 0.07-micrometers line-and-space pattern can be printed.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masaaki Ito, Takashi Soga, Hiromasa Yamanashi, and Taro Ogawa "Reflection masks for soft x-ray projection lithography", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212759
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