3 July 1995 Repairing x-ray masks with Ta absorbers using focused ion beams
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Proceedings Volume 2512, Photomask and X-Ray Mask Technology II; (1995); doi: 10.1117/12.212775
Event: Photomask Japan 1995, 1995, Kanagawa, Japan
Abstract
A focus ion beam system was used to repair x-ray masks with Ta absorbers. To repair opaque defects, excess Ta is removed by ion milling. Since the wall of the milled pattern is tapered compared to the absorber patterns of the mask, milling parameters such as the ion dose are justified by printing the repaired pattern on the resist with the SR exposure system. Clear repairs are made with Ta deposited using a organometallic material. Since the Ta content of the deposit was about 30%, a Ta deposition layer thicker than 1.2-micrometers is necessary to keep the contrast of the x-rays high. The repaired Ta absorber patterns have high chemical durability and are not damaged by wet cleaning with strong acid. We printed on resists with repaired masks and confirmed that the defects were completely repaired.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ikuo Okada, Yasunao Saitoh, Takashi Ohkubo, Misao Sekimoto, Tadahito Matsuda, "Repairing x-ray masks with Ta absorbers using focused ion beams", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); doi: 10.1117/12.212775; https://doi.org/10.1117/12.212775
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KEYWORDS
Tantalum

X-rays

Photomasks

Ion beams

Ions

Opacity

Printing

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