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3 July 1995 Reticle flexure influence on pattern positioning accuracy for reticle writing
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Abstract
This paper presents a method for estimating the influence of reticle flexure on pattern positioning accuracy, and evaluates the method by measuring patterned reticles. Reticle flexure causes the pattern shift which occurs by stretching or compression of the reticle surface. A height-mapping function of an electron beam (EB) writing system and a measuring machine are used to calculate the pattern shift due to reticle flexure. The bent shape of a reticle on the EB-writing system differs from that on the measuring machine, so that the patten shifts on the two machines are different. The pattern shifts caused by the bent shape difference were excluded from the measurement result of pattern positioning errors. The values of pattern positioning accuracy evaluation parameters, x, y-scaling and orthogonality, are calculated among several reticles (5 inches, 0.09 inches thick). The deviations of these three values are reduced to less than 50% of their uncompensated values.
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Ryoichi Hirano, Kazuto Matsuki, Shusuke Yoshitake, Yoshihiko Takahashi, Shuichi Tamamushi, Yoji Ogawa, and Toru Tojo "Reticle flexure influence on pattern positioning accuracy for reticle writing", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212776
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