Sub 0.1 um ArF excimer laser lithography with alternating phase-shifting masks

Jun Ushioda; Yuko Seki; Hiroyoshi Tanabe; Yukio Ogura; Katsumi Maeda; Takeshi Ohfuji

doi:10.1117/12.212787

3 July 1995 Sub 0.1 μm ArF excimer laser lithography with alternating phase-shifting masks

Jun Ushioda, Yuko Seki, Hiroyoshi Tanabe, Yukio Ogura, Katsumi Maeda, Takeshi Ohfuji

Proceedings Volume 2512, Photomask and X-Ray Mask Technology II; (1995) https://doi.org/10.1117/12.212787
Event: Photomask Japan 1995, 1995, Kanagawa, Japan

Abstract

We delineated 0.088 micrometers line and space patterns by using an etched-in phase-shifting mask. The etched area of the mask had good morphology and high transmittance for deep UV light. The phase-shifting angle of the etched area was well controlled within 180 +/- 5 degrees.

Citation Download Citation

Jun Ushioda, Yuko Seki, Hiroyoshi Tanabe, Yukio Ogura, Katsumi Maeda, and Takeshi Ohfuji "Sub 0.1 μm ArF excimer laser lithography with alternating phase-shifting masks", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212787

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available