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3 July 1995 Sub 0.1 μm ArF excimer laser lithography with alternating phase-shifting masks
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Abstract
We delineated 0.088 micrometers line and space patterns by using an etched-in phase-shifting mask. The etched area of the mask had good morphology and high transmittance for deep UV light. The phase-shifting angle of the etched area was well controlled within 180 +/- 5 degrees.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Ushioda, Yuko Seki, Hiroyoshi Tanabe, Yukio Ogura, Katsumi Maeda, and Takeshi Ohfuji "Sub 0.1 μm ArF excimer laser lithography with alternating phase-shifting masks", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212787
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