8 September 1995 High-density phase-change optical disk with a Si reflective layer
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Proceedings Volume 2514, Optical Data Storage '95; (1995) https://doi.org/10.1117/12.218726
Event: Optical Data Storage '95, 1995, San Diego, CA, United States
For high-density recording at a wavelength of 690 nm, we developed a phase-change optical disk with a Si reflective layer. We estimated the effect of interference layer by calculating optical properties. The absorption control required for mark edge recording and a 2 dB C/N improvement was obtained by forming a ZnS-SiO2 interference layer on the Si layer. Under recording conditions with a minimum bit length of 0.335 micrometers and a track pitch of 1.2 micrometers , a sufficient C/N and a BER less than 10-4 were confirmed. This result indicates that the recording capacity of the new disk is more than 4 GB.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mitsuya Okada, Shuichi Ohkubo, Tatsunori Ide, Michio Murahata, Hiroko Honda, Tsutomu Matsui, "High-density phase-change optical disk with a Si reflective layer", Proc. SPIE 2514, Optical Data Storage '95, (8 September 1995); doi: 10.1117/12.218726; https://doi.org/10.1117/12.218726

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