8 September 1995 High-density phase-change optical disk with a Si reflective layer
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Proceedings Volume 2514, Optical Data Storage '95; (1995) https://doi.org/10.1117/12.218726
Event: Optical Data Storage '95, 1995, San Diego, CA, United States
For high-density recording at a wavelength of 690 nm, we developed a phase-change optical disk with a Si reflective layer. We estimated the effect of interference layer by calculating optical properties. The absorption control required for mark edge recording and a 2 dB C/N improvement was obtained by forming a ZnS-SiO2 interference layer on the Si layer. Under recording conditions with a minimum bit length of 0.335 micrometers and a track pitch of 1.2 micrometers , a sufficient C/N and a BER less than 10-4 were confirmed. This result indicates that the recording capacity of the new disk is more than 4 GB.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mitsuya Okada, Mitsuya Okada, Shuichi Ohkubo, Shuichi Ohkubo, Tatsunori Ide, Tatsunori Ide, Michio Murahata, Michio Murahata, Hiroko Honda, Hiroko Honda, Tsutomu Matsui, Tsutomu Matsui, } "High-density phase-change optical disk with a Si reflective layer", Proc. SPIE 2514, Optical Data Storage '95, (8 September 1995); doi: 10.1117/12.218726; https://doi.org/10.1117/12.218726

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