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8 September 1995 Memory mechanism investigation in electron trapping materials
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Proceedings Volume 2514, Optical Data Storage '95; (1995) https://doi.org/10.1117/12.218745
Event: Optical Data Storage '95, 1995, San Diego, CA, United States
Abstract
Wideband semiconductor based on the alkali-earth metals and doped with the rare-earth ions are sensitive to the laser irradiation in the blue spectral range. An alkali-earth sulphide doped with the rare-earth ions could be used as recording reversible media for data storage.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vasily V. Motuz, Vasyliy G. Kravets, Vladislav I. Zimenko, and Viacheslav V. Petrov "Memory mechanism investigation in electron trapping materials", Proc. SPIE 2514, Optical Data Storage '95, (8 September 1995); https://doi.org/10.1117/12.218745
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