8 September 1995 Partial response modulation codes for electron trapping optical memory (ETOM)
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Proceedings Volume 2514, Optical Data Storage '95; (1995) https://doi.org/10.1117/12.218708
Event: Optical Data Storage '95, 1995, San Diego, CA, United States
Abstract
We consider the problem of coding for a recording channel. Traditional magnetic or optical channels employ saturation recording, where the input to the channel is a two-level waveform. New optical recording channels have been developed that support unsaturated, M-ary (M >= 3) signal levels. In this paper we consider the analysis and design of partial response codes for these channels. Comparisons are made with M-ary runlength limited codes. The partial response codes presented here achieve the largest known storage density and achieve a coding gain of 3-6 dB over M-ary runlength limited codes.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steven W. McLaughlin, Steven W. McLaughlin, A. Robert Calderbank, A. Robert Calderbank, Rajiv Laroia, Rajiv Laroia, John M. Gerpheide, John M. Gerpheide, Amit K. Jain, Amit K. Jain, } "Partial response modulation codes for electron trapping optical memory (ETOM)", Proc. SPIE 2514, Optical Data Storage '95, (8 September 1995); doi: 10.1117/12.218708; https://doi.org/10.1117/12.218708
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