15 June 1995 Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy
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Abstract
We report for the first time, fabrication of photoconducting UV detectors made from GaN films grown by molecular beam epitaxy. Semi-insulating GaN films were grown by the method of electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy. Photoconductive devices with interdigitated electrodes were fabricated and their photoconducting properties were investigated. In this paper we report on the performance of the detectors in terms of UV responsivity, gain-quantum efficiency product, spectral response, and response time. We have measured responsivity of 125A/W and gain-quantum efficiency product of 600 at 254nm and 25V. The response time was measured to be on the order of 20ns for our detectors, corresponding to a bandwidth of 25Mhz. The spectral response showed a sharp long-wavelength cutoff at 265nm, and remained constant in the 200nm to 365nm range. The response of the detectors to low-energy x-rays was measured and found to be linear for x- rays with energies ranging from 60kVp to 90kVp.
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Mira Misra, Theodore D. Moustakas, Robert P. Vaudo, Rajminder Singh, and Kanai S. Shah "Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy", Proc. SPIE 2519, X-Ray and Ultraviolet Sensors and Applications, (15 June 1995); doi: 10.1117/12.211915; https://doi.org/10.1117/12.211915
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