15 June 1995 Real-time monitoring of diamond-like film growth by x-ray diffraction
Author Affiliations +
Abstract
The first in-situ x-ray monitoring was applied for superthin (20-250 A) diamond-like carbon (DLC) films investigation. The film thickness, density, roughness, and growth rate were calculated from reflectivity measurements during deposition and etching processes. The objects of in-situ investigations were DLC films obtained by RF-method in C6H12+Ar and C6H12+N2 mixtures on silicon substrates. The results of an investigation reveal that the roughness and the density of DLC films were varied at early stages. It was shown that obtained results can be explained by island mechanism of DLC films growth. It was shown that in-situ x-ray monitoring system permits us to examine the ultra thin layers and also to carry out the diagnostic of transient processes as the deposition conditions changes.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander M. Baranov, V. V. Sleptsov, Sergei A. Tereshin, Igor Fedorovich Mikhailov, V. I. Pinegin, "Real-time monitoring of diamond-like film growth by x-ray diffraction", Proc. SPIE 2519, X-Ray and Ultraviolet Sensors and Applications, (15 June 1995); doi: 10.1117/12.211894; https://doi.org/10.1117/12.211894
PROCEEDINGS
8 PAGES


SHARE
KEYWORDS
X-rays

Etching

Deposition processes

Silicon films

Carbon

Silicon

Reflection

Back to Top