8 December 1995 Photoexcitations in C60 single crystals and thin films
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Abstract
The complete knowledge of the intrinsic electronic properties of new materials like fullerenes is essential for their technical application in optoelectronic and photonic devices, as well as in terms of the fundamental physical processes. The value of the intrinsic energy gap, the shape of the bandedge, and the nature and origin of the radiative recombination channels after photoexcitation of C60 are still unsettled. We report on photoluminescence emission and excitation spectroscopy on high-quality C60 single crystals and high-quality C60 thin films grown by molecular beam epitaxy (MBE) on mica substrates.
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Guenther Leising, Guenther Leising, M. Mauri, M. Mauri, Farideh Meghdadi, Farideh Meghdadi, Hans Kuzmany, Hans Kuzmany, Siegmar Roth, Siegmar Roth, } "Photoexcitations in C60 single crystals and thin films", Proc. SPIE 2530, Fullerenes and Photonics II, (8 December 1995); doi: 10.1117/12.228109; https://doi.org/10.1117/12.228109
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