New p-type absorber films formed by interfacial diffusion in chemically deposited metal chalcogenide multilayer films

Padmanabhan Karunakara Nair; Santhamma M.T. Nair; Hailin Hu; Ling Huang; R. A. Zingaro; E. A. Meyers

doi:10.1117/12.217335

23 August 1995 New p-type absorber films formed by interfacial diffusion in chemically deposited metal chalcogenide multilayer films

Padmanabhan Karunakara Nair, Santhamma M.T. Nair, Hailin Hu, Ling Huang, R. A. Zingaro, E. A. Meyers

Author Affiliations +

Proceedings Volume 2531, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV; (1995) https://doi.org/10.1117/12.217335
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

We report on new p-type ternary metal chalcogenide absorber films for possible solar energy applications. The films are formed by interfacial diffusion in chemically deposited multilayer films: CuS films (0.15 - 0.6 micrometer) deposited on ZnS, PbS or Bi₂S₃ films (approximately equal to 0.1 micrometer). The diffusion takes place during annealing at temperatures above 150 degree(s)C and is shown in the XPS depth profile spectra of the annealed samples: metal atoms (Zn, Pb or Bi) of the underlying substrate films are detected at the surface layers after the annealing. The peculiarity of the multilayer films is that they show almost constant sheet resistance upon further annealing until 350 degree(s)C. The sheet resistances are in the range of 20 - 100 (Omega) suggesting conductivities (p-type) of up to 400 (Omega) ^-1cm^-1. In the case of CuS on Bi₂S₃ films, the formation of a compound, Cu₃BiS₃, is clearly detected.

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Padmanabhan Karunakara Nair, Santhamma M.T. Nair, Hailin Hu, Ling Huang, R. A. Zingaro, and E. A. Meyers "New p-type absorber films formed by interfacial diffusion in chemically deposited metal chalcogenide multilayer films", Proc. SPIE 2531, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV, (23 August 1995); https://doi.org/10.1117/12.217335

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