Properties of conducting In-S-O films prepared from a volatile complex compound

V. G. Bessergenev; Elena Nikolaevna Ivanova; Yu. A. Kovalevskaya; V. N. Kirichenko; Stanislav Vasiljevic Larionov; V. O. Handros; S. A. Gromilov

doi:10.1117/12.217352

23 August 1995 Properties of conducting In-S-O films prepared from a volatile complex compound

V. G. Bessergenev, Elena Nikolaevna Ivanova, Yu. A. Kovalevskaya, V. N. Kirichenko, Stanislav Vasiljevic Larionov, V. O. Handros, S. A. Gromilov

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Proceedings Volume 2531, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV; (1995) https://doi.org/10.1117/12.217352
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

Described in the work is a two-stage process of the fabrication of indium oxide films, consisting in a preliminary synthesis of indium sulphide and its subsequent oxidation. Films of In₂S₃ were prepared by the method of gas-phase deposition from the volatile complex compound indium(III) isopropylxanthate. The crystal structure and electrical characteristics of the In₂S₃ films were studied when the temperature of the synthesis was varied in the 230 - 450 degree(s)C range. According to the x-ray phase analysis of the indium sulphide films, they were polycrystalline with cubic ((alpha) -phase) or tetragonal ((beta) -phase) structure. They were oriented with the (alpha) [111] direction perpendicular to the glass substrate for the whole interval of the synthesis temperatures. The In₂S₃ films turned into cubic In₂O₃ after annealing in the presence of oxygen. It was shown by auger analysis that annealed samples were indium oxide films with a small admixture of sulphur. The electrical resistance was measured in situ, during the oxidation process. The specific electrical resistance of indium sulphide films varied from 0.1 to 500 Ohm.cm depending on the temperature of the synthesis. The electrical characteristics of the In₂O₃:S films were connected with the properties of the starting In₂S₃ films. The lowest values of specific resistivity ((rho) approximately equals 1.10^-2 Ohm.cm) for In₂O₃:S films were attained by the oxidation of In₂S₃ films synthesized at T >= 370 degree(s)C .

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V. G. Bessergenev, Elena Nikolaevna Ivanova, Yu. A. Kovalevskaya, V. N. Kirichenko, Stanislav Vasiljevic Larionov, V. O. Handros, and S. A. Gromilov "Properties of conducting In-S-O films prepared from a volatile complex compound", Proc. SPIE 2531, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV, (23 August 1995); https://doi.org/10.1117/12.217352

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KEYWORDS

Indium

Oxidation

Indium oxide

Resistance

Sulfur

Transparent conducting films

Annealing

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