23 August 1995 Spatially variable reaction in the formation of anodically grown porous silicon structure
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Abstract
The formation mechanism of anodically grown porous silicon is experimentally shown to be controlled by two electrochemical reactions: the silicon dissolution reaction occurring at fluorine-covered sites on the surface and the oxidation of molecular hydrogen that takes place at hydrogen-covered sites. The latter reaction injects electrons in the silicon surface and produces an increase in dissolution rate at fluorine-covered sits. The dissolution rate increase in the presence of excess charge at the fluorine-covered sites is investigated theoretically by semi-empirical Hartree-Fock calculations that show that this spatially variable dissolution generates the porous silicon structure.
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Maria Cristina dos Santos, Maria Cristina dos Santos, Douglas S. Galvao, Douglas S. Galvao, O. Teschke, O. Teschke, D. M. Soares, D. M. Soares, } "Spatially variable reaction in the formation of anodically grown porous silicon structure", Proc. SPIE 2531, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV, (23 August 1995); doi: 10.1117/12.217346; https://doi.org/10.1117/12.217346
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