23 August 1995 Vacuum-evaporated indium tin oxide layers
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Abstract
Indium tin oxide (ITO) film has been prepared by sequential vacuum deposition of indium and tin on plain glass followed by oxidation at temperatures around 400 degrees - 650 degrees Celsius. By a proper control of the time of evaporation and the heating current the concentration of vacuum evaporated indium was maintained constant and tin concentration was varied in the range of 10 - 60% by weight. ITO films with good optical and electrical properties can be obtained by adjusting the ratio of Sn:In in the range of 1:9 to 1:35 after heat- treatment at 400 degrees to 600 degrees Celsius. The films exhibit a sheet resistance of 20 ohms per square with an optical transmission of 60% at 500 nm when the Sn:In ratio was maintained at 1:9. The film was found suitable for ITO/Si solar cells and as substrates for photo anodes in PEC cells.
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S. Venkatasubramanian, S. Venkatasubramanian, K. R. Murali, K. R. Murali, N. Rangarajan, N. Rangarajan, V. Subramanian, V. Subramanian, T. Elango, T. Elango, } "Vacuum-evaporated indium tin oxide layers", Proc. SPIE 2531, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV, (23 August 1995); doi: 10.1117/12.217351; https://doi.org/10.1117/12.217351
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