Propagation of subnanosecond pulses over Metal-Insulator-Semiconductor (MIS) microstrip line has been reported to suffer from serious time- delay (the Slow-wave effect) in the microwave/millimeter wave frequency range (200approximately equals 4000 MHz) and in the substrate resistivity range of 10-3 approximately equals 102 (Omega) cm (such as in silicon or gallium arsenide). This is primarily due to a huge equivalent capacitance generated by the thin insulation layer. This paper investigates the feasibility of employing a periodically corrugated surface at the oxide- semiconductor interface, which provides guided mode conversion (TM-to- Hybrid mode), to decrease the equivalent inductance of the microstrip line and compensates for the increase in parasitic capacitance. The price paid for speed increase in signal propagation is signal attenuation. It is predicted that for wiring length less than 3 mm signal attenuation will be in a tolerable range (less than 10%).