8 September 1995 Development of compact extreme ultraviolet interferometry for on-line testing of lithography cameras
Author Affiliations +
Abstract
When characterizing an extreme ultraviolet (EUV) lithographic optical system, visible light interferometry is limited to measuring wavefront aberration caused by surface figure error while failing to measure wavefront errors induced by the multilayer coatings. This fact has generated interest in developing interferometry at an EUV camera's operational wavelength (at wavelength testing), which is typically around 13 nm. While a laser plasma source (LPS) is being developed as a lithography production source, it has generally been considered that only an undulator located at a synchrotron facility can provide the necessary laser-like point source for EUV interferometry. Although an undulator-based approach has been successfully demonstrated, it would be advantageous to test a camera in its operational configuration. We are developing the latter approach by utilizing extended source size schemes to provide usable flux throughput. A slit or a grating mounted in front of the source can provide the necessary spatial coherence for Ronchi interferometry. The usable source size is limited only by the well-corrected field of view of the camera under test. The developemnt of this interferometer will be presented.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Avijit K. Ray-Chaudhuri, Avijit K. Ray-Chaudhuri, Rodney P. Nissen, Rodney P. Nissen, Kevin D. Krenz, Kevin D. Krenz, Richard H. Stulen, Richard H. Stulen, William C. Sweatt, William C. Sweatt, Mial E. Warren, Mial E. Warren, Joel R. Wendt, Joel R. Wendt, Stanley H. Kravitz, Stanley H. Kravitz, John E. Bjorkholm, John E. Bjorkholm, } "Development of compact extreme ultraviolet interferometry for on-line testing of lithography cameras", Proc. SPIE 2536, Optical Manufacturing and Testing, (8 September 1995); doi: 10.1117/12.218412; https://doi.org/10.1117/12.218412
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT

Development of EUV lithography tools at Nikon
Proceedings of SPIE (December 03 2008)
100-picometer interferometry for EUVL
Proceedings of SPIE (June 30 2002)
Interferometric testing of EUV lithography cameras
Proceedings of SPIE (October 31 1997)

Back to Top