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1 September 1995 Optoelectronic scanning device for the observation of scattering of YAG laser light in semiconductor materials
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Abstract
Infrared laser light scattering is a powerful tool for investigation of inhomogeneities in the bulk semiconductor materials. For sample illumination the diode pumped Nd:YAG laser emitting monomode 1.06 micrometers beam is used. The laser beam waist inside the semiconductor samples does not excess 50 micrometers . The scattered centers inside the sample are observed perpendicularly to the direction of illuminating beam using microscope with infrared CCD camera. To obtain 2D image of scanned plane the sample is moved horizontally by the scanning stage driven by computer. Controlled changing of scanning plane enables the investigation of the sample in the third direction. The scanning and scattered image processing are controlled by computer. The device is tested on GaAs wafers.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marek Daszkiewicz, Jacek Galas, Tomasz Kozlowski, Narcyz Blocki, Marta Pawlowska, and Andrzej Hruban "Optoelectronic scanning device for the observation of scattering of YAG laser light in semiconductor materials", Proc. SPIE 2541, Optical Scattering in the Optics, Semiconductor, and Computer Disk Industries, (1 September 1995); https://doi.org/10.1117/12.218334
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