23 October 1995 Material properties assessment for large-diameter single-crystal silicon
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Abstract
An experimental database of the optical, electrical, physical, and structural properties was generated for as-grown samples from large diameter silicon boules. Fourier transform infrared spectroscopy (FTIR) was utilized to evaluate the oxygen content and infrared absorbance in the HF laser bandwidth (2.6 to 3 micrometer). The bulk absorption coefficient over this bandwidth was quantified by performing laser absorption calorimetry. Electrical properties were obtained by performing Hall measurements at room temperature and 77 K. The carrier concentration and impurity type were determined, and simple photoconduction experiments were performed to ascertain the presence of bound carriers. The thermal conductivity was measured directly utilizing the Fourier technique, and the coefficient of thermal expansion was determined for room temperature to 600 degrees Celsius via dilatometer measurements. Finally, crystallographic studies involving chemical etching were performed to delineate structural defects and determine their densities. Some of these procedures were repeated after the samples had been defect engineered, i.e., given a high temperature heat treatment, followed by a rapid quench. The simple heat treatment was shown to reduce the bulk absorption coefficient of the material by a factor of four over the HF laser bandwidth (2.6 to 3 micrometer). All results from this material assessment are reported.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William A. Goodman, Mark S. Goorsky, "Material properties assessment for large-diameter single-crystal silicon", Proc. SPIE 2543, Silicon Carbide Materials for Optics and Precision Structures, (23 October 1995); doi: 10.1117/12.225294; https://doi.org/10.1117/12.225294
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KEYWORDS
Silicon

Absorption

Oxygen

Thermography

Infrared radiation

Polishing

Etching

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